ICP-RIE Plasma Etching:

Plasma_cryogenicSiPlasma_lithographyPlasma etching result of VCSEL structure using Ar-Cl2 gas mixtureEtching process result of Si-DRIE (SF6-C4F8-O2) post O2 cleanPlasma etching result of SF6-C4F8 based gas chopping process(IAP-Jena)ICP PECVD TEOS SiO2 film step coverage over Si ridge(IISB-Erlangen)ICP RIE result of SF6O2-C4F8-based Si gas chopping process

What's New?

ALD Reactor CNR IMM

The Institute for Microelectronics and Microsystems (CNR-IMM/1/) in Catania, Italy is using a SI PEALD LL tool with an 8-inch wafer configuration. The integration of novel high-k gate dielectrics and passivating layers on devices based on Gallium Nitride and other wide band gap semiconductors is investigated using SENTECH PEALD tool →read more

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